Novel gate-all-around poly-Si TFTs with multiple nanowire channels

Ta Chuan Liao*, Shih Wei Tu, Ming H. Yu, Wei Kai Lin, Cheng Chin Liu, Kuo Jui Chang, Ya-Hsiang Tai, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


The novel gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with multiple nanowire channels (MNCs) have been, for the first time, fabricated using a simple process to demonstrate high-performance electrical characteristics and high immunity to short-channel effects (SCEs). The nanowire channel with high body-thickness-to-width ratio (TFin/WFin), which is approximately equal to one, was realized only with a sidewall-spacer formation. Moreover, the unique suspending MNCs were also achieved to build the GAA structure. The resultant GAA-MNC TFTs showed outstanding three-dimensional (3-D) gate controllability and excellent electrical characteristics, which revealed a high on/off current ratio (>108), a low threshold voltage, a steep subthreshold swing, a near-free drain-induced barrier lowering, as well as an excellent SCE suppression. Therefore, such high-performance GAA-MNC TFTs are very suitable for applications in system-on-panel and 3-D circuits.

Original languageEnglish
Pages (from-to)889-891
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2008


  • Gate-all-around (GAA)
  • Nanowire
  • Poly-Si
  • Thin-film transistors (TFTs)
  • Three-dimensional (3-D) device

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