A novel gate-all-around raised source / drain sub-10-nm poly-Si nanowire (NW) channel TFTs with self-aligned corked gate structure (GAA RSDNW-TFTs) have been successfully demonstrated. It is through the use of a novel fabrication process requiring no advanced lithographic tools. The corked gate (CG) structure, only the poly gate pattern was etched, reduces complex of process significantly. For the first time, several properties of this 3D architecture are explored: (i) the Si NW dimension is about 7 nm x 12 nm and a superior smooth elliptical shape is obtained in the category of poly-Si NW TFTs. (ii) the temperature dependence and the instability under PBTI stress of the main electrical parameters are proposed.