Novel finite-q plasmons in p-type GaAs/AlxGa1-xAs quantum wells

Shun-Jen Cheng, R. R. Gerhardts

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We present a calculation of collective plasmon excitations in p-type GaAs/AlGaAs quantum wells, which is based on the random phase approximation and takes, within the 4×4 k·p model, band-structure effects exactly into account. We predict that the strong dependence of the subband wave functions on the in-plane wave vector, which does not exist in n-type quantum wells, leads to the existence of a novel, additional inter-subband plasmon at finite wave vectors and to a strong coupling of the intra- and the inter-subband plasmons, even in symmetric wells.

Original languageEnglish
Pages (from-to)669-674
Number of pages6
JournalSolid State Communications
Volume116
Issue number12
DOIs
StatePublished - 24 Nov 2000

Fingerprint Dive into the research topics of 'Novel finite-q plasmons in p-type GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As quantum wells'. Together they form a unique fingerprint.

  • Cite this