Novel FD SOI devices structure for low standby power applications

Ming Wen Ma*, Tien-Sheng Chao, Kuo Hsing Kao, Jyun Siang Huang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.

Original languageEnglish
Pages59-62
Number of pages4
StatePublished - 12 Dec 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: 7 May 200611 May 2006

Conference

Conference2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period7/05/0611/05/06

Keywords

  • Fringing electric field
  • High-κ offset spacer dielectric
  • S/D extension shift
  • Silicon-on-insulator (SOI)

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