Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process

Jin-Chern Chiou*, Chen Chun Hung, Li Jung Shieh, Zhao Long Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We present a 3(3 micro-optoelectromechanical systems (MOEMS) phase shifter array that achieves a λ/4 vertical displacement with peak-to-valley deformation within λ/10 (514-nm light source). The mirror reflective surface is made of an aluminum layer with a high optical reflectivity exceeding 90%. Each individual micromirror pixel is controlled and driven by comb drive actuators. The phase shifter array is fabricated using the Taiwan Semiconductor Manufacturing Company 0.35-μm 2P4M complementary metal-oxide semiconductor process. In-house post-processing is utilized to reserve a 40-μm-thick bulk-silicon under the 200 μm×200 μm mirror. This eliminates mirror deformation from residual stress after the device is released. The micromirror demonstrates a vertical displacement of λ/4 at 38 V. The device resonant frequency is 3.71 kHz, and the fill factor is 0.65. This MOEMS phase shifter array can be used as a spatial light modulator in holographic data storage systems.

Original languageEnglish
Article number013030
JournalJournal of Micro/Nanolithography, MEMS, and MOEMS
Issue number1
StatePublished - 1 Jan 2010


  • Comb drive actuator
  • Complementary
  • Metal-oxide
  • Micro-optoelectromechanical systems
  • Micromirror
  • Phase shifter
  • Semiconductor-microelectromechanical systems

Fingerprint Dive into the research topics of 'Novel electrostatic MOEMS phase shifter array using CMOS-MEMS process'. Together they form a unique fingerprint.

Cite this