Novel dopant activation in the heavily boron-doped p+−Si was created by applying an electrical current of high current density. The p+−Si was implanted by 40 keV BF+ 2 of 5 Ö 1015ions /cm2 and annealed at 900°C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 Ö 106A/cm2 was achieved. The resistance of the p+ -Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed.