Novel dopant activation of heavily doped p+ − Si by high current densities

J. S. Huang, King-Ning Tu

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2 Scopus citations

Abstract

Novel dopant activation in the heavily boron-doped p+−Si was created by applying an electrical current of high current density. The p+−Si was implanted by 40 keV BF+ 2 of 5 Ö 1015ions /cm2 and annealed at 900°C for 30 min to obtain a partial boron activation. For additional activation, we gradually applied current until a current density of 5 Ö 106A/cm2 was achieved. The resistance of the p+ -Si responded by gradually increasing, then decreasing with a precipitous drop. The resistance was reduced by a factor of 5 to 18. Mechanisms of the novel dopant activation are proposed.

Original languageEnglish
Pages (from-to)4926-4929
Number of pages4
JournalPhysical Review Letters
Volume77
Issue number24
DOIs
StatePublished - 1 Jan 1996

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