A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1999|
|Event||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 14 Jun 1999 → 16 Jun 1999