Novel di-directional tunneling NOR (BiNOR) type 3-D flash memory cell

Evans Ching Song Yang*, Cheng Jye Liu, Tien-Sheng Chao, Ming Chi Liaw, Charles Ching Hsiang Hsu

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

A novel 3-D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in NOR array, which guarantees better tunnel oxide reliability. (In the past, bi-directional tunneling program/erase can only be performed in NAND array). Moreover, high read performance is achieved by more than 15% conduction current enhancement due to 3-dimensional cell structure.

Original languageEnglish
Pages (from-to)85-86
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Dec 1999
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 14 Jun 199916 Jun 1999

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