Novel designs for high-efficiency millimeter-wave zero-bias detectors

Chun Yen Huang*, Chin Chung Nien, Chen Ming Li, Ya Chung Yu, Li Yuan Chang, Jenn-Hawn Tarng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Novel designs for high-efficiency millimeter wave zero-bias detectors are presented. As the renowned backward diodes are extensively exploited in the utilization of zero bias detectors due to its preferable conduction for small reverse biases, the single-handed diode detectors reveal its inherent capabilities by the semiconductor processes which the detectors are made from. The selected process chiefly dominates the detectors' performances before take any circuit design techniques. Here we present novel designs that employ Schottky diodes in conjunction with field effect transistors (FETs) throughout zero bias condition in 0.15μm GaAs pseudomorphic HEMT (pHEMT) process. Through computational estimations, the novel designs show remarkable results of that the proposed designs surpass the conventional Schottky diode only structures in rectified current levels by four orders, and the isolation of RF-DC also be improved at millimeter wave frequencies.

Original languageEnglish
Title of host publication2010 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010 - Proceedings
Pages507-510
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010 - Athens, Greece
Duration: 12 Dec 201015 Dec 2010

Publication series

Name2010 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010 - Proceedings

Conference

Conference2010 IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010
CountryGreece
CityAthens
Period12/12/1015/12/10

Keywords

  • Detectors
  • Millimeter wave detectors
  • Millimeter wave imaging
  • Zero-bias

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