Novel Cu-to-Cu bonding with Ti passivation at 180^{\circ}{\rm C} in 3-D integration

Yan Pin Huang, Yu San Chien, Ruoh Ning Tzeng, Ming Shaw Shy, Teu Hua Lin, Kou Hua Chen, Chi Tsung Chiu, Jin-Chern Chiou, Ching Te Chuang, Wei Hwang, Ho Ming Tong, Kuan-Neng Chen

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180^{\circ}{\rm C}. In addition, excellent electrical stability against humidity and temperature cycling is achieved. Diffusion behavior and mechanism of Cu and Ti are also discussed. With excellent bond results and reliability, this bonded scheme has the potential to be applied in 3-D integration.

Original languageEnglish
Article number6650051
Pages (from-to)1551-1553
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number12
DOIs
StatePublished - 1 Dec 2013

Keywords

  • 3-D integration
  • Cu bonding
  • Ti passivation

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