NOVEL CONTACT PROCESS FOR POWER MOSFET'S.

G. Chen*, S. Sapp, N. Wylie, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A technique of making electrical contact to the p diffusions of a DMOS power transistor by over-sintering the aluminum/silicon contact is reported. The potential advantages are the elimination of a critical masking step, and the realization of smaller cell size. Test devices showed somewhat higher contact resistances to the n and p diffusions than achievable by conventional process. Good I-V characteristics and yield were obtained over a wide range of contact process conditions.

Original languageEnglish
Pages (from-to)672-673
Number of pages2
JournalElectron device letters
VolumeEDL-7
Issue number12
DOIs
StatePublished - 1 Dec 1986

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