Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

Hsin Chiang You*, Chi Chang Wu, Fu-Hsiang Ko, Tan Fu Lei, Wen Luh Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.

Original languageEnglish
Pages (from-to)2568-2571
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
StatePublished - 19 Dec 2007

Fingerprint Dive into the research topics of 'Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory'. Together they form a unique fingerprint.

Cite this