The authors use a very simple sol-gel spin coating method at 900 °C and 1 min rapid thermal annealing to fabricate three different poly-Si-oxide- nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4 V for (i) Hf O2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 19 Dec 2007|