Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Tung Ming Pan, Tan Fu Lei, Chao Chyi Chen, Tien-Sheng Chao, Ming Chi Liaw, Wen Lu Yang, Ming Shih Tsai, C. P. Lu, W. H. Chang

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.

Original languageEnglish
Pages (from-to)338-340
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number7
DOIs
StatePublished - 1 Jul 2000

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