Novel chirped multilayer quantum-dot lasers

Kuo-Jui Lin*, C. Y. Chang, W. C. Tseng, C. P. Lee, K. F. Lin, R. Xuan, J. Y. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations


Chirped multilayer (N=10) QD lasers with 2-, 3- and 5-layer of longer-, medium-, and shorter-wavelength QD stacks, respectively, were grown in this work. Low threshold current density and high saturated modal gain were achieved in this specially designed QD structure. Empirical gain-current analysis was performed on this chirped multilayer QD structure for the first time. It was consistent with our spectral observations and provided valuable information on carrier recombination in chirped multilayer QD structure. Two novel spectral characteristics were discovered also for the first time. First, simultaneous two-wavelength lasing around threshold was observed under particular gain-loss condition at this specific multilayer structure of QD stacking numbers. Second, at cryogenic temperature, simultaneous two-wavelength lasing emissions switched from longer-wavelength lasing first to shorter-wavelength lasing first with increasing current injection. Non-uniform carrier distribution among chirped multilayer QD structure is evident at low temperature below 200 K from our analysis.

Original languageEnglish
Title of host publicationSemiconductor Lasers and Laser Dynamics III
StatePublished - 8 May 2008
EventSemiconductor Lasers and Laser Dynamics III - Strasbourg, France
Duration: 7 Apr 20089 Apr 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceSemiconductor Lasers and Laser Dynamics III


  • Chirped multilayer QDs
  • Gain-current characteristics
  • Molecular beam epitaxy
  • Optical coherent tomography
  • Quantum dots
  • Semiconductor lasers
  • Spectral characteristics
  • Temperature characteristics

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