Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories

Shinji Satoh; Kazuhiro Shimizu; Tomoharu Tanaka; Fumitaka Arai; Seiichi Aritome; Shirota Riichiro

doi:10.1109/VLSIT.1998.689219

Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories

Shinji Satoh^*, Kazuhiro Shimizu, Tomoharu Tanaka, Fumitaka Arai, Seiichi Aritome, Shirota Riichiro

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.

Original language	English
Pages (from-to)	108-109
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1998.689219
State	Published - 1 Jan 1998
Event	Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 9 Jun 1998 → 11 Jun 1998

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title = "Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories",

abstract = "This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.",

author = "Shinji Satoh and Kazuhiro Shimizu and Tomoharu Tanaka and Fumitaka Arai and Seiichi Aritome and Shirota Riichiro",

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pages = "108--109",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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note = "null ; Conference date: 09-06-1998 Through 11-06-1998",

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Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories. / Satoh, Shinji; Shimizu, Kazuhiro; Tanaka, Tomoharu; Arai, Fumitaka; Aritome, Seiichi; Riichiro, Shirota.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.1998, p. 108-109.

Research output: Contribution to journal › Conference article › peer-review

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AU - Satoh, Shinji

AU - Shimizu, Kazuhiro

AU - Tanaka, Tomoharu

AU - Arai, Fumitaka

AU - Aritome, Seiichi

AU - Riichiro, Shirota

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AB - This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.

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M3 - Conference article

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JO - Digest of Technical Papers - Symposium on VLSI Technology

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SN - 0743-1562

Y2 - 9 June 1998 through 11 June 1998

ER -

Novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories

Abstract

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