Abstract
This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 um-rule. This memory cell is essential for realizing highly scaled, and fast-programming NAND flash memories of 4 Gbit and beyond.
Original language | English |
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Pages (from-to) | 108-109 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
DOIs | |
State | Published - 1 Jan 1998 |
Event | Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA Duration: 9 Jun 1998 → 11 Jun 1998 |