This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.
|Number of pages||4|
|Journal||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|State||Published - 1 Jan 1999|
|Event||Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan|
Duration: 7 Jun 1999 → 10 Jun 1999