Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

Evans Ching Song Yang*, Cheng Jye Liu, Tien-Sheng Chao, Ming Chi Liaw, Charles Ching Hsiang Hsu

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.

Original languageEnglish
Pages (from-to)207-210
Number of pages4
JournalInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
Duration: 7 Jun 199910 Jun 1999

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