Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate

Ray-Hua Horng*, Tsung Yen Tsai, Cheng Ying Yen, Ming Tsung Hung, Chun Ting Pan, Dong Sing Wuu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Chemical lift-off (CLO) technique has been paid more attention since no damages will be induced to GaN epi-layer during the epilayer lift-off process. In this study two novel CLO approaches were used to separate GaN epilayer from sapphire substrate. One is using Ga 2 O 3 sacrificial layer deposited by pulsed laser deposition. The other is using a stripe patterned SiO 2 grown by PECVD. Afterwards, the CLO of GaN epilayers grown on these two templates via metal organic chemical vapor deposition from sapphire substrate was successfully realized with a hydrofluoric acid as an etchant.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XV
DOIs
StatePublished - 28 Mar 2011
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States
Duration: 25 Jan 201127 Jan 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7954
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
CountryUnited States
CitySan Francisco, CA
Period25/01/1127/01/11

Keywords

  • CLO
  • Ga O
  • GaN
  • MOCVD
  • SiO

Fingerprint Dive into the research topics of 'Novel approaches to realizing chemical lift-off of GaN epilayer from sapphire substrate'. Together they form a unique fingerprint.

Cite this