Novel approach to study patterned thin film local stress for microelectronics application

D. W. Zheng*, Xinhua Wang, K. Shyu, C. T. Chang, Weijia Wen, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A novel testing methodology to study the full-field stress distribution in patterned microstructures has been developed for microelectronics applications. The testing structure consists of a Si diaphragm, whose deformation caused by the stress due to an overlying patterned thin film is captured by a Twyman-Green interferometer. The finite element model used to analyze this structure assumes a uniform in-plane biaxial initial stress in the patterned thin film before stress relaxation occurs, and gives the Si diaphragm deflection profile which matches the measured values. Hence the full-field stress in the patterned thin film and Si diaphragm can be given. The stress distribution in an electroless Ni pad on a Si diaphragm is used as an example.

Original languageEnglish
Pages568-571
Number of pages4
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 21 Oct 199823 Oct 1998

Conference

ConferenceProceedings of the 1998 5th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period21/10/9823/10/98

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