This letter is the first to successfully demonstrate the 2-bit/cell wrapped-selected-gate (WSG) SONOS thin-film transistor (TFT) memory using source-side injection (SSI). Because of the higher programming efficiency of SSI, a memory window of approximately 3 V can be easily achieved in 10 μ s and 30 ms for the program and erase modes, respectively. In addition, we performed an excellent 2-bit/cell distinguish margin for 3-V memory window in WSG-SONOS TFT memory. The optimal reliability of the endurance and data retention tests can be executed by adjusting the applied voltage appropriately.
- Source-side injection (SSI)
- thin-film transistor memory
- wrapped-selected-gate (WSG)-SONOS