Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

Chia Hsun Wu, Jian You Chen, Ping Cheng Han, Ming Wen Lee, Kun Sheng Yang, Huan Chung Wang, Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Chang Fu Dee, Azrul Azlan Hamzah, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations


A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage ( Vth ) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance ( R mathrmON ) and high positive Vth. The designed tri-gate device exhibits a high Vth of +2.61 V at current density ( IDS) = 1A mm, a high maximum current density ( I}DS, MAX ) of 896 mA/mm, a low R\mathrmON of 5.0Ω · mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance ( R \mathrmON}, \text SP ) among reported normally-off GaN device results with BV >650 V.

Original languageEnglish
Article number8756227
Pages (from-to)3441-3446
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 1 Aug 2019


  • AlGaN/GaN
  • charge trap gate stack
  • enhancement mode
  • ferroelectric materials
  • normally-off
  • tri-gate

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    Wu, C. H., Chen, J. Y., Han, P. C., Lee, M. W., Yang, K. S., Wang, H. C., Chang, P. C., Luc, Q. H., Lin, Y. C., Dee, C. F., Hamzah, A. A., & Chang, E. Y. (2019). Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications. IEEE Transactions on Electron Devices, 66(8), 3441-3446. [8756227].