Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

C. T. Chang*, T. H. Hsu, Edward Yi Chang, Y. C. Chen, H. D. Trinh, K. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1V was achieved by using an 16nm-thick Al2O3 gate oxide film. Additionally, the device performed a drain current density of 500mA/mm and a peak transconductance of 100mS/mm, which are comparable to the conventional normally-on devices.

Original languageEnglish
Pages (from-to)1280-1281
Number of pages2
JournalElectronics Letters
Issue number18
StatePublished - 2 Sep 2010

Fingerprint Dive into the research topics of 'Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage'. Together they form a unique fingerprint.

Cite this