Normally-OFF GaN MIS-HEMT with F-Doped Gate Insulator Using Standard Ion Implantation

Chia Hsun Wu, Ping Cheng Han, Quang Ho Luc, Ching Yi Hsu, Ting En Hsieh, Huan Chung Wang, Yen Ku Lin, Po Chun Chang, Yueh Chin Lin, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A normally-OFF GaN MIS-HEMT with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, resulting in high positive threshold voltage (Vth) for the device, meanwhile preserving low ON-resistance. Compared to the fluorine-free and recess-free device, only about 16% increase of ON-resistance was observed for the F-doped devices. The fabricated F-doped device exhibits a threshold voltage of +0.68 V at IDS = 5 μA/mm, a current density of 620 mA/mm, an OFF-state breakdown voltage of 800 V, and high ON/OFF current ratio of 10¹⁰. For thermal stability consideration of fluorine dopant, the Vth-thermal stability test and positive bias temperature instability (PBTI) test were also discussed.

Original languageEnglish
Pages (from-to)893-899
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume6
Issue number1
DOIs
StatePublished - 25 Jul 2018

Keywords

  • Al₂O₃
  • AlGaN/GaN
  • Aluminum gallium nitride
  • Enhancement-mode
  • Fluorine
  • Gallium nitride
  • Insulators
  • Ions
  • Logic gates
  • MIS-HEMT
  • Wide band gap semiconductors
  • fluorine ion implantation.
  • normally-OFF

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