Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs

Jin He*, Xing Zhang, Yangyuan Wang, Xuemei Xi, Mansun Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Normalized mutual integral difference operator (NMIDO), a novel experimental method for extracting the threshold voltage of MOSFETs, is presented in this paper. The basic principle of this method is to use the extreme spectrum characteristics of the NMIDO to find the threshold voltage. We have demonstrated numerically that this method is applied in the extraction of the threshold voltage of MOSFETs with different effective channel length and different parasitic series resistance cases. It has been shown that this method is sensitive to the channel length variation while insensitive to the parasitic resistance component. The extracted results on the threshold voltage of MOSFETs have also been compared with those obtained by the second-derivative method and the good agreement has been found, showing the advantage of the method presented here.

Original languageEnglish
Pages (from-to)667-670
Number of pages4
JournalMicroelectronics Journal
Volume33
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • MOSFET devices
  • Normalized mutual integral difference operator
  • Parameter extraction
  • Series resistance effect
  • Threshold voltage

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