Normalized mutual integral difference method to extract threshold voltage of MOSFETs

Jin He*, Xuemei Xi, Mansun Chan, Kanyu Cao, Chen-Ming Hu, Yingxue Li, Xing Zhang, Ru Huang, Yangyuan Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

A novel normalized mutual integral difference (NMID) method is presented in this letter to extract the threshold voltage of MOSFETs. The basic principle of this method is to utilize the exponential-linear characteristics of MOSFETs current so as to obtain the normalized mutual integral difference extreme spectral characteristics. The proposed method is sensitive to channel length variation while being insensitive to parasitic resistance. The extracted results on the threshold voltage show a good consistency and have been compared with those obtained by the second-derivative technique. A good correlation between both methods has also been found.

Original languageEnglish
Pages (from-to)428-430
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number7
DOIs
StatePublished - 1 Jul 2002

Keywords

  • MOSFET
  • Normalized mutual integral difference (NMID) method
  • Threshold voltage

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