Nonvolatile Si/SiO2/SiN/SiO2 Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics

Shih Ching Chen, Ting Chang Chang*, Po-Tsun Liu, Yung Chun Wu, Jing Yi Chin, Ping Hung Yeh, Li Wei Feng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A silicon-oxide-nitride-oxide-silicon type polycrystalline silicon thin-film transistor (poly-Si TFT) with nanowire channels was investigated for both transistor and memory applications. The poly-Si TFT memory device has superior electrical characteristics, such as higher drain current, smaller threshold voltage, and steeper subthreshold slope. Also, the simulation result on electrical field reveals that the electrical field across the tunnel oxide is enhanced and that across the blocking oxide is reduced at the corner regions. This will lead to the parasitic gate injection activity and the erasing speed can be apparently improved in the memory device due to the pronounced corner effect and narrow channel width.

Original languageEnglish
Article number193103
JournalApplied Physics Letters
Volume91
Issue number19
DOIs
StatePublished - 19 Nov 2007

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