Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica

Jia Min Shieh*, Jung Y. Huang, Wen Chien Yu, Jian Da Huang, Yi Chao Wang, Ching Wei Chen, Chao Kei Wang, Wen Hsien Huang, An Thung Cho, Hao-Chung Kuo, Bau Tong Dai, Fu Liang Yang, Ci Ling Pan

*Corresponding author for this work

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Abstract

We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous silica matrix. Under external field, the Si nanocrystals could be displaced in the porechannels causing displaced charge distributions and therefore a field-controllable electric polarization. Nonvolatile memory is demonstrated with a metal-oxide-semiconductor field-effect transistor.

Original languageEnglish
Article number143501
JournalApplied Physics Letters
Volume95
Issue number14
DOIs
StatePublished - 19 Oct 2009

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    Shieh, J. M., Huang, J. Y., Yu, W. C., Huang, J. D., Wang, Y. C., Chen, C. W., Wang, C. K., Huang, W. H., Cho, A. T., Kuo, H-C., Dai, B. T., Yang, F. L., & Pan, C. L. (2009). Nonvolatile memory with switching interfacial polar structures of nano Si-in-mesoporous silica. Applied Physics Letters, 95(14), [143501]. https://doi.org/10.1063/1.3240888