Nonvolatile memory with molecule-engineered tunneling barriers

Tuo-Hung Hou*, Hassan Raza, Kamran Afshari, Daniel J. Ruebusch, Edwin C. Kan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We report a novel field-sensitive tunneling barrier by embedding C60 in Si O2 for nonvolatile memory applications. C60 is a better choice than ultrasmall nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy levels to prompt resonant tunneling through Si O2 at high fields. However, this process is quenched at low fields due to highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap and large charging energy of C60. Furthermore, we demonstrate an improvement of more than an order of magnitude in retention to program/erase time ratio for a metal nanocrystal memory. This shows promise of engineering tunnel dielectrics by integrating molecules in the future hybrid molecular-silicon electronics.

Original languageEnglish
Article number153109
JournalApplied Physics Letters
Issue number15
StatePublished - 24 Apr 2008

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