Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate

Chungho Lee*, Tuo-Hung Hou, Edwin Chih Chuan Kan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Heterogeneous floating-gates consisting of metal nanocrystals and silicon nitride (Si3N4) for nonvolatile memory applications have been fabricated and characterized. By combining the self-assembled Au nanocrystals and plasma-enhanced chemical vapor deposition (PECVD) nitride layer, the heterogeneous-stack devices can achieve enhanced retention, endurance, and low-voltage program/erase characteristics over single-layer nanocrystals or nitride floating-gate memories. The metal nanocrystals at the lower stack enable the direct tunneling mechanism during program/erase to achieve low-voltage operation and good endurance, while the nitride layer at the upper stack works as an additional charge trap layer to enlarge the memory window and significantly improve the retention time. The write/erase time of the heterogeneous stack is almost the same as that of the single-layer metal nanocrystals. In addition, we could further enhance the memory window by stacking more nanocrystal/nitride heterogeneous layers, as long as the effective oxide thickness from the control gate is still within reasonable ranges to control the short channel effects.

Original languageEnglish
Pages (from-to)2697-2702
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume52
Issue number12
DOIs
StatePublished - 1 Dec 2005

Keywords

  • Direct tunneling
  • Nanocrystal/nitride heterogeneous floating-gate
  • Nonvolatile memories

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