Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals

P. H. Yeh, L. J. Chen, Po-Tsun Liu, D. Y. Wang, T. C. Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Original languageEnglish
Pages (from-to)339-343
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume7
Issue number1
DOIs
StatePublished - 1 Jan 2007

Keywords

  • CoSi2
  • HfO Layer
  • Nanocrystals
  • NiSi2
  • Nonvolatile Memory Devices

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