Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.
- HfO Layer
- Nonvolatile Memory Devices