Nonvolatile memory characteristics with embedded hemispherical silicon nanocrystals

Jian Hao Chen*, Tan Fu Lei, Dolf Landheer, Xiaohua Wu, Ming Wen Ma, Woei Cherng Wu, Tsung Yu Yang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Silicon nanocrystal-embedded memories were fabricated by using the thermal agglomeration of an ultrathin (1.5-1.8nm) amorphous silicon (a-Si) film. The a-Si was deposited on a 4-nm tunnel-oxide layer by electron beam evaporation and subsequently annealed in situ at 850°C for 5 min. Hemispherical Si nanocrystals were self-assembled, and nonvolatile memories were fabricated after depositing a 17-nm control-oxide layer. A threshold voltage window of 0.9 V was achieved under write/erase (W/E) voltages of ±10 V, and good endurance characteristics up to 104 cycles were exhibited. Increasing W/E voltages created a large memory window (>2.7V), and the retention characteristics showed little temperature dependence up to 85°C.

Original languageEnglish
Pages (from-to)6586-6588
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number10 A
DOIs
StatePublished - 9 Oct 2007

Keywords

  • Floating gate
  • Hemispherically shaped silicon
  • MOSFET
  • Nonvolatile memory
  • Silicon nanocrystal

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