Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

Wei Ren Chen; Ting Chang Chang; Jui Lung Yeh; Chun-Yen Chang; Shih Ching Chen

doi:10.1063/1.2841049

Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

Wei Ren Chen, Ting Chang Chang, Jui Lung Yeh, Chun-Yen Chang, Shih Ching Chen

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni0.3Si0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.

Original language	English
Article number	062112
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2841049
State	Published - 2008

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title = "Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals",

abstract = "The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni0.3Si0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.",

author = "Chen, {Wei Ren} and Chang, {Ting Chang} and Yeh, {Jui Lung} and Chun-Yen Chang and Chen, {Shih Ching}",

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AU - Chen, Wei Ren

AU - Chang, Ting Chang

AU - Yeh, Jui Lung

AU - Chang, Chun-Yen

AU - Chen, Shih Ching

PY - 2008

Y1 - 2008

N2 - The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni0.3Si0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.

AB - The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni0.3Si0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.

U2 - 10.1063/1.2841049

DO - 10.1063/1.2841049

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

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