Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks

Po-Tsun Liu*, C. S. Huang, C. W. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Nonvolatile memory devices with oxide-nitride-oxide stack structures were fabricated on glass substrates using low-temperature polycrystalline silicon technology. The Fowler-Nordheim tunneling scheme is more suitable than channel hot carrier injection for the programming of the polycrystalline silicon nonvolatile memory device. A memory window of 1.5 V can be obtained at a programming voltage of 20 V. After 104 programming/erasing cycles, a threshold voltage shift of 1.5 V is maintained. Furthermore, the proposed memory device exhibits good retention for 50 h at 60 °C without a significant decline in the memory window.

Original languageEnglish
Article number182115
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
StatePublished - 10 May 2007

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