Nonvolatile floating gate memory characteristics of Sb2Te- SiO2 nanocomposite thin films

Cheng Hsun Yang, Kuo Chang Chiang, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Nonvolatile floating gate memory (NFGM) device composed of Sb2Te nanocrystals (NCs) as the charge-storage traps embedded in SiO2 matrix was prepared by the target-attachment sputtering method at various nitrogen (N2) incorporation conditions. Via post annealing at 450 C in ambient air, the sample prepared at the condition N2/Ar = 0.1 exhibited a maximum memory window (ΔVFB) shift = 4.4 V and charge density = 4.2 × 1012 cm- 2 under ± 7 V gate voltage sweep. N2 incorporation not only reduced the Sb 2Te NC size to about 5 nm, but also suppressed the oxygen defects and antimony oxides in the sample. Feasibility of the Sb2Te chalcogenide NCs to NFGM fabrication with the simplified process and relatively low annealing temperature is demonstrated.

Original languageEnglish
Pages (from-to)263-268
Number of pages6
JournalThin Solid Films
Volume529
DOIs
StatePublished - 1 Feb 2013

Keywords

  • Chalcogenides
  • Nanocomposite
  • Nonvolatile floating gate memory
  • SbTe

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