We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.
|Number of pages||6|
|State||Published - 1 Jan 2000|
|Event||LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices - Antalya, Turkey|
Duration: 15 Sep 1999 → 17 Sep 1999