Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells

Kien-Wen Sun*, T. S. Song, S. Y. Wang, C. P. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.

Original languageEnglish
Pages (from-to)189-194
Number of pages6
JournalMicroelectronic Engineering
Volume51
DOIs
StatePublished - 1 Jan 2000
EventLDSD'99: 3rd International Conference on Low Dimensional Structures and Devices - Antalya, Turkey
Duration: 15 Sep 199917 Sep 1999

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