Nonscaling of MOSFET's linear resistance in the deep submicrometer regime

D. Esseni; H. Iwai; M. Saito; B. Riccó

doi:10.1109/55.663537

Nonscaling of MOSFET's linear resistance in the deep submicrometer regime

D. Esseni^*, H. Iwai, M. Saito, B. Riccó

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper investigates the scaling properties of deep submicron MOSFET's and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance R_TOT = [V_DS/I_DS] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.

Original language	English
Pages (from-to)	131-133
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	19
Issue number	4
DOIs	https://doi.org/10.1109/55.663537
State	Published - Apr 1998

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AB - This paper investigates the scaling properties of deep submicron MOSFET's and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance RTOT = [VDS/IDS] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.

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