Nonscaling of MOSFET's linear resistance in the deep submicrometer regime

D. Esseni*, H. Iwai, M. Saito, B. Riccó

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

This paper investigates the scaling properties of deep submicron MOSFET's and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance RTOT = [VDS/IDS] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.

Original languageEnglish
Pages (from-to)131-133
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number4
DOIs
StatePublished - Apr 1998

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