Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.
- Bismuth titanate oxide (BTO)
- Sol-gel method