Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin; Ming Chi Wu; Chun Chieh Lin; Tseung-Yuen Tseng

doi:10.1080/00150190902870101

Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin, Ming Chi Wu, Chun Chieh Lin, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

Original language	English
Pages (from-to)	30-37
Number of pages	8
Journal	Ferroelectrics
Volume	380
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190902870101
State	Published - 1 Dec 2009
Event	6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan Duration: 2 Aug 2008 → 6 Aug 2008

Keywords

Bismuth titanate oxide (BTO)
RRAM
Sol-gel method

Access to Document

10.1080/00150190902870101

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title = "Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film",

abstract = "Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.",

keywords = "Bismuth titanate oxide (BTO), RRAM, Sol-gel method",

author = "Lin, {Meng Han} and Wu, {Ming Chi} and Lin, {Chun Chieh} and Tseung-Yuen Tseng",

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T1 - Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

AU - Lin, Meng Han

AU - Wu, Ming Chi

AU - Lin, Chun Chieh

AU - Tseng, Tseung-Yuen

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

AB - Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

KW - Bismuth titanate oxide (BTO)

KW - RRAM

KW - Sol-gel method

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