Nonlinear terahertz spectroscopy of semiconductor nanostructures

Chih-Wei Luo, K. Reimann, M. Woerner, T. Elsaesser*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Nonlinear frequency conversion and electro-optic sampling allow for the generation and phase-resolved characterization of few-cycle pulses in the frequency range up to 50 THz. Electric field transients with amplitudes of up to several MV/cm are applied to study coherent nonlinear excitations of low-dimensional semiconductors. We report the first observation of Rabi oscillations on intersubband transitions of electrons in GaAs/AlGaAs quantum wells. Frequency and phase of such oscillations are controlled in the 0.3- to 2.5-THz range via the strength and shape of the mid-infrared driving pulse.

Original languageEnglish
Pages (from-to)435-440
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Issue number4
StatePublished - 14 Jan 2004


  • Spectroscopy
  • Frequency Conversion
  • Nonlinear Frequency
  • Rabi Oscillation
  • Semiconductor Nanostructures

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