Nonalloyed ohmic contacts to N-Si using a strained Si0.5Ge0.5 buffer layer

Hsing Kuen Liou*, Edward S. Yang, King-Ning Tu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nonalloyed shallow ohmic contacts to n-Si have been fabricated by using an 80 angstrom thick strained Si0.5Ge0.5 buffer layer grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core level binding energies of the strained and the relaxed Si0.5Ge0.5 and to determine their relative Fermi level positions. It was found that the surfaces of strained Si0.5Ge0.5 exhibit pinning very close to the conduction band. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W or Pt as contact metals. In the case of Pt, a 500 angstrom W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the Pt/W/Si0.5Ge0.5/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5×10-5 Ω·cm2.

Original languageEnglish
Title of host publicationSilicides, Germanides, and Their Interfaces
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
PublisherPubl by Materials Research Society
Pages317-322
Number of pages6
ISBN (Print)1558992197
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: 29 Nov 19932 Dec 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume320
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period29/11/932/12/93

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