NON-QUASISTATIC MOSFET MODEL FOR SPICE.

Hong June Park; Ping Keung Ko; Chen-Ming Hu

doi:10.1109/IEDM.1987.191512

NON-QUASISTATIC MOSFET MODEL FOR SPICE.

Hong June Park^*, Ping Keung Ko, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

An analytic nonquasistatic MOSFET model has been derived and implemented in SPICE. The analytic model is based on an approximate solution to the nonlinear transient current continuity equation in the channel. The model includes the large signal transient and the small-signal frequency-response analyses. Comparisons have been made between this model and the 1-D numerical solution to the current continuity equation, 2-D device simulation (PISCES) and the quasistatic results. The channel charge partitioning scheme in the charge-based model is shown to be inadequate for the fast transient and the high-frequency AC analysis. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives.

Original language	English
Pages (from-to)	652-655
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1987.191512
State	Published - 1 Dec 1987

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title = "NON-QUASISTATIC MOSFET MODEL FOR SPICE.",

abstract = "An analytic nonquasistatic MOSFET model has been derived and implemented in SPICE. The analytic model is based on an approximate solution to the nonlinear transient current continuity equation in the channel. The model includes the large signal transient and the small-signal frequency-response analyses. Comparisons have been made between this model and the 1-D numerical solution to the current continuity equation, 2-D device simulation (PISCES) and the quasistatic results. The channel charge partitioning scheme in the charge-based model is shown to be inadequate for the fast transient and the high-frequency AC analysis. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives.",

author = "Park, {Hong June} and Ko, {Ping Keung} and Chen-Ming Hu",

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doi = "10.1109/IEDM.1987.191512",

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AU - Park, Hong June

AU - Ko, Ping Keung

AU - Hu, Chen-Ming

PY - 1987/12/1

Y1 - 1987/12/1

N2 - An analytic nonquasistatic MOSFET model has been derived and implemented in SPICE. The analytic model is based on an approximate solution to the nonlinear transient current continuity equation in the channel. The model includes the large signal transient and the small-signal frequency-response analyses. Comparisons have been made between this model and the 1-D numerical solution to the current continuity equation, 2-D device simulation (PISCES) and the quasistatic results. The channel charge partitioning scheme in the charge-based model is shown to be inadequate for the fast transient and the high-frequency AC analysis. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives.

AB - An analytic nonquasistatic MOSFET model has been derived and implemented in SPICE. The analytic model is based on an approximate solution to the nonlinear transient current continuity equation in the channel. The model includes the large signal transient and the small-signal frequency-response analyses. Comparisons have been made between this model and the 1-D numerical solution to the current continuity equation, 2-D device simulation (PISCES) and the quasistatic results. The channel charge partitioning scheme in the charge-based model is shown to be inadequate for the fast transient and the high-frequency AC analysis. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives.

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U2 - 10.1109/IEDM.1987.191512

DO - 10.1109/IEDM.1987.191512

M3 - Conference article

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EP - 655

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -

NON-QUASISTATIC MOSFET MODEL FOR SPICE.

Abstract

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