Hong June Park*, Ping Keung Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


An analytic nonquasistatic MOSFET model has been derived and implemented in SPICE. The analytic model is based on an approximate solution to the nonlinear transient current continuity equation in the channel. The model includes the large signal transient and the small-signal frequency-response analyses. Comparisons have been made between this model and the 1-D numerical solution to the current continuity equation, 2-D device simulation (PISCES) and the quasistatic results. The channel charge partitioning scheme in the charge-based model is shown to be inadequate for the fast transient and the high-frequency AC analysis. This model does not use a charge-partitioning scheme and the currents are dependent on the history of the terminal voltages, not just the instantaneous voltages and their derivatives.

Original languageEnglish
Pages (from-to)652-655
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1987

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