Non-quasistatic modeling of the BJT quasi-neutral base

Clement K. Szeto*, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A non-quasistatic charge-based BJT model developed for all injection levels in the quasi-neutral base region is implemented for circuit simulation. 2D and 1D device simulations with constant and exponential doping devices verify the transient analysis.

Original languageEnglish
Title of host publicationProceedings of the 1993 Bipolar/Bicoms Circuits and Technology
Editors Anon
PublisherPubl by IEEE
Pages197-200
Number of pages4
ISBN (Print)0780313178
DOIs
StatePublished - 1 Dec 1993
EventProceedings of the 1993 Bipolar/Bicoms Circuits and Technology - Minneapolis, MN, USA
Duration: 4 Oct 19935 Oct 1993

Publication series

NameProceedings of the 1993 Bipolar/Bicoms Circuits and Technology

Conference

ConferenceProceedings of the 1993 Bipolar/Bicoms Circuits and Technology
CityMinneapolis, MN, USA
Period4/10/935/10/93

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