Abstract
Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.
Original language | English |
---|---|
Pages (from-to) | 1614-1618 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 310 |
Issue number | 7-9 |
DOIs | |
State | Published - 1 Apr 2008 |
Keywords
- A1. X-ray diffraction
- A3. Laser epitaxy
- B1. Nitride