Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition

Yen Teng Ho*, Mei Hui Liang, Feng Ke Hsiao, Wei Lin Wang, Chun Yen Peng, Wei Da Chen, Wei-I Lee, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.

Original languageEnglish
Pages (from-to)1614-1618
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
StatePublished - 1 Apr 2008

Keywords

  • A1. X-ray diffraction
  • A3. Laser epitaxy
  • B1. Nitride

Fingerprint Dive into the research topics of 'Non-polar a-plane GaN grown on LaAlO<sub>3</sub> (0 0 1) substrate by pulsed laser deposition'. Together they form a unique fingerprint.

  • Cite this