Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition

Yen Teng Ho; Mei Hui Liang; Feng Ke Hsiao; Wei Lin Wang; Chun Yen Peng; Wei Da Chen; Wei-I Lee; Li Chang

doi:10.1016/j.jcrysgro.2007.11.047

Non-polar a-plane GaN grown on LaAlO₃ (0 0 1) substrate by pulsed laser deposition

Yen Teng Ho^*, Mei Hui Liang, Feng Ke Hsiao, Wei Lin Wang, Chun Yen Peng, Wei Da Chen, Wei-I Lee, Li Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO₃ (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]_GaN∥[1 1̄ 0]_LAO and [1 1̄ 00]_GaN∥[1 1̄ 0]_LAO.

Original language	English
Pages (from-to)	1614-1618
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.047
State	Published - 1 Apr 2008

Keywords

A1. X-ray diffraction
A3. Laser epitaxy
B1. Nitride

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@article{e54a064c54e24531aba5c18f01c3fab0,

title = "Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition",

abstract = "Non-polar (1 1 {\=2} 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 {\=1} 0]LAO and [1 {\=1} 00]GaN∥[1 {\=1} 0]LAO.",

keywords = "A1. X-ray diffraction, A3. Laser epitaxy, B1. Nitride",

author = "Ho, {Yen Teng} and Liang, {Mei Hui} and Hsiao, {Feng Ke} and Wang, {Wei Lin} and Peng, {Chun Yen} and Chen, {Wei Da} and Wei-I Lee and Li Chang",

year = "2008",

month = apr,

day = "1",

doi = "10.1016/j.jcrysgro.2007.11.047",

language = "English",

volume = "310",

pages = "1614--1618",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition

AU - Ho, Yen Teng

AU - Liang, Mei Hui

AU - Hsiao, Feng Ke

AU - Wang, Wei Lin

AU - Peng, Chun Yen

AU - Chen, Wei Da

AU - Lee, Wei-I

AU - Chang, Li

PY - 2008/4/1

Y1 - 2008/4/1

N2 - Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.

AB - Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.

KW - A1. X-ray diffraction

KW - A3. Laser epitaxy

KW - B1. Nitride

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JF - Journal of Crystal Growth

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