Abstract
Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.
| Original language | English |
|---|---|
| Pages (from-to) | 1614-1618 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 7-9 |
| DOIs | |
| State | Published - 1 Apr 2008 |
Keywords
- A1. X-ray diffraction
- A3. Laser epitaxy
- B1. Nitride
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Ho, Y. T., Liang, M. H., Hsiao, F. K., Wang, W. L., Peng, C. Y., Chen, W. D., Lee, W-I., & Chang, L. (2008). Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition. Journal of Crystal Growth, 310(7-9), 1614-1618. https://doi.org/10.1016/j.jcrysgro.2007.11.047