Non-Planarization Cu-Cu Direct Bonding and Gang Bonding with Low Temperature and Short Duration in Ambient Atmosphere

Tzu Chieh Chou, Kai Ming Yang, Jian Chen Li, Ting Yang Yu, Ying Ting Chung, Cheng Ta Ko, Yu Hua Chen, Tzyy Jang Tseng, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low temperature (150oC) and short duration Cu-Cu direct bonding, without planarization, and gang bonding approaches are demonstrated with excellent bond strength, electrical characteristics, and reliability. The concept is based on the high stress-led inducing deformation and internal friction to achieve low temperature bonding. In addition, the bonding structure has the advantage of high roughness tolerance on surface without CMP requirement. Compared to current products using Cu-Cu direct bonding at 350-400oC with long duration and vacuum requirement, the breakthrough of proposed schemes provides the feasibility for product realization in 3D integration packaging.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728140315
DOIs
StatePublished - Dec 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period7/12/1911/12/19

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