Non-ohmic behavior of carrier transport in highly disordered graphene

Shun-Tsung Lo*, Chiashain Chuang, R. K. Puddy, T. M. Chen, C. G. Smith, C. T. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.

Original languageEnglish
Article number165201
JournalNanotechnology
Volume24
Issue number16
DOIs
StatePublished - 26 Apr 2013

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