Non-hysteretic negative capacitance FET with Sub- 30mV/dec swing over 106X current range and ION of 0.3mA/μm without strain enhancement at 0.3V VDD

Chun Wing Yeung*, Asif I. Khan, Jen Yuan Cheng, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

24 Scopus citations

Abstract

A new design for negative capacitance FET (NCFET) is proposed. Simulation using 2-D drift-diffusion and 1-D Landau Model exhibits hysteresis free ID-VG transfer characteristic with low subthreshold swing (28.3mV/decade over six-orders-ofmagnitude current change). Without considering mobility enhancement by strain, non-hysteretic NCFET can achieve ION of 333 μA/μm at 0.3V VDD (IOFF=10pA/μm).

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-259
Number of pages3
ISBN (Electronic)9780615717562
StatePublished - Sep 2012
Event2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
Duration: 5 Sep 20127 Sep 2012

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
CountryUnited States
CityDenver
Period5/09/127/09/12

Keywords

  • FeFET
  • Ferroelectric
  • NCFET
  • Negative capacitance

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