Noise overshoot at drain current kink in SOI MOSFET

Jian Chen, Peng Fang, Ping Keung Ko, Chen-Ming Hu, Ray Solomon, Tung Yi Chan, Charles G. Sodini

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

29 Scopus citations

Abstract

Bias dependence of the drain current noise power of SOI MOSFET's were studied and low frequency noise overshoot at the drain current kink is observed for the first time in SOI MOSFET. The overshoot has a width of about 0.7 V and exhibits a peak noise power which is two orders of magnitude higher than the normal noise level. This newly found noise phenomena will affect the usefulness of SOI device in precision analogy circuits. It also provides a new way for studying traps related SOI film and device phenomena.

Original languageEnglish
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40-41
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
DOIs
StatePublished - 2 Oct 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: 2 Oct 19904 Oct 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings

Conference

Conference1990 IEEE SOS/SOI Technology Conference
CountryUnited States
CityKey West
Period2/10/904/10/90

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