Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier

Wei Jin*, Weidong Liu, Chaohe Hai, Philip C H Chan, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

SOI technology is a promising candidate for radio-frequency and microwave applications. In this work, SOI low-noise amplifiers (LNA) operating at 1.8-GHz under 1.5-V power supply are reported for the first time and the high-frequency noise characteristics are studied. A physical SOI thermal noise model is applied, and all the major noise sources associated with the transistors are modeled. SPICE simulation results of the circuit noise agree well with the measurement data. LNA composed of floating-body SOI devices offers better performance than that with body-tied devices.

Original languageEnglish
Pages (from-to)803-809
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number4
DOIs
StatePublished - 1 Apr 2001

Keywords

  • Induced gate noise
  • Low-noise amplifier (LNA)
  • SOI MOSFET
  • Thermal noise

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