Noise figure degradation under emitter-base reverse stress for high-frequency bipolar ICs

Nobuyuki Itoh*, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, the correlation between noise figure degradation and the degradation of DC characteristics during emitter-base reverse stress is studied. It was found that the generation-recombination centers, which introduce emitter-base reverse stress, have an influence on high-frequency noise characteristic degradation.

Original languageEnglish
Title of host publicationESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
EditorsJ. P. Noblanc, P. Gentil, M. Verdone, J. Borel, A. Nouailhat
PublisherIEEE Computer Society
Pages727-730
Number of pages4
ISBN (Electronic)2863321358
ISBN (Print)9782863321355
StatePublished - 1993
Event23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France
Duration: 13 Sep 199316 Sep 1993

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference23rd European Solid State Device Research Conference, ESSDERC 1993
CountryFrance
CityGrenoble
Period13/09/9316/09/93

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