NO gas sensor based on ZnGa 2 O 4 epilayer grown by metalorganic chemical vapor deposition

Min Ru Wu, Wei Zhong Li, Chun Yi Tung, Chiung Yi Huang, Yi Hung Chiang, Po Liang Liu, Ray-Hua Horng*

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

A gas sensor based on a ZnGa 2 O 4 (ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO 2 (500 ppb), SO 2 (125 ppm), CO (125 ppm), and CO 2 (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.

Original languageEnglish
Article number7459
JournalScientific reports
Volume9
Issue number1
DOIs
StatePublished - 1 Dec 2019

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