Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Han Ping Shieh

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

Original languageEnglish
Article number052102
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - 31 Jan 2011

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    Liu, P-T., Chou, Y. T., Teng, L. F., Li, F. H., & Shieh, H. P. (2011). Nitrogenated amorphous InGaZnO thin film transistor. Applied Physics Letters, 98(5), [052102]. https://doi.org/10.1063/1.3551537