Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ching Wei Chen, Chao-Hsin Chien, Shih Chich Ou, Tsu Hsiu Perng, Da Yuan Lee, Yi Cheng Chen, Horng-Chih Lin, Tiao Yuan Huang, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-57
Number of pages4
ISBN (Electronic)4891140372, 9784891140373
DOIs
StatePublished - 1 Jan 2003
EventInternational Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan
Duration: 6 Nov 20037 Nov 2003

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2003
CountryJapan
CityTokyo
Period6/11/037/11/03

Keywords

  • Boron
  • Degradation
  • Dielectrics
  • Hot carriers
  • Leakage current
  • MOSFETs
  • Nitrogen
  • Plasmas
  • Tunneling
  • Voltage

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  • Cite this

    Chen, C. W., Chien, C-H., Ou, S. C., Perng, T. H., Lee, D. Y., Chen, Y. C., Lin, H-C., Huang, T. Y., & Chang, C. Y. (2003). Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 54-57). [1252508] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159183