Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs

Jiann Heng Chen*, Tan Fu Lei, Chia Lin Chen, Tien-Sheng Chao, Ying Wen, Kuag Ting Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor (n-MOSFET) with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number1
StatePublished - 1 Jan 2002

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